NAMBE 2017 Conference Papers

15 Presentations 0 Sections

The 33rd North American Conference on Molecular Beam Epitaxy (NAMBE 2017) is a prominent international forum for reporting scientific and technological developments in Molecular Beam Epitaxy research.

The conference showcases important results from fundamental materials and device research, through technological applications, and into high-volume and low-cost production. NAMBE features the presentations of the MBE Innovator Award, the NAMBE Young Investigator Award, and the Best Student Paper awards.

In addition to a diverse technical program, vendors will exhibit the latest equipment available for material growth and characterization. The exhibit will surround the coffee breaks and poster presentations, providing many opportunities for discussions between attendees and vendors.

Growth of high-quality Bi2Se3 topological insulators using (Bi1-xInx)2Se3 buffer layers

Presentation: Yong Wang, Theresa P. Ginley, and Stephanie Law, 6 slides

In situ annealing of III1-xMnxV ferromagnetic semiconductors

Presentation: Xinyu Liu, Seul-Ki Bac, Pitambar Sapkota, Cameron Gorsak, Xiang Li, Sining Dong, Sanghoon Lee, Sylwia Ptasinska, Jacek K. Furdyna, and Margaret Dobrowolska, 6 slides

High-temperature molecular beam epitaxy of hexagonal boron nitride layers

Presentation: Tin S. Cheng, Alex Summerfield, Christopher J. Mellor, Andrew Davies, Andrei N. Khlobystov, Laurence Eaves, C. Thomas Foxon, Peter H. Beton, and Sergei V. Novikov, 6 slides

Dependence of ferromagnetic properties on phosphorus concentration in Ga1-xMnxAs1-yPy

Presentation: Xiang Li, Xinyu Liu, Sining Dong, Cameron Gorsak, Jacek K. Furdyna, Margaret Dobrowolska, Seul-Ki Bac, Sanghoon Lee, and Sergei Rouvimov, 6 slides

Site-controlled droplet epitaxy of GaAs quantum dots by deposition through shadow masks

Presentation: Viktoryia Zolatanosha and Dirk Reuter, 5 slides

Formation of self-assembled GaAs quantum dots via droplet epitaxy on misoriented GaAs(111)B substrates

Presentation: Alexander Trapp and Dirk Reuter, Nothing uploaded yet

Reduced twinning and surface roughness of Bi2Se3 and Bi2Te3 layers grown by molecular beam epitaxy on sapphire substrates

Presentation: Ido Levy, Thor Axtmann Garcia, Sharmin Shafique, and Maria C. Tamargo, 5 slides

Sb-incorporation in MBE-grown metamorphic InAsSb for long-wavelength infrared applications

Presentation: Stephanie Tomasulo, Chaffra A. Affouda, Nadeemullah A. Mahadik, Mark E. Twigg, Michael K. Yakes, and Edward H. Aifer, 6 slides

Normally-off operating GaN-based pseudovertical MOSFETs with MBE grown source region

Presentation: Rico Hentschel, Stefan Schmult, Andre Wachowiak, Andreas Großer, Jan Ga¨ rtner, and Thomas Mikolajick, 5 slides

Growth of II-VI/III-V heterovalent quantum structures

Presentation: Maxwell B. Lassise, Peng Wang, Brian D. Tracy, Guopeng Chen, David J. Smith, and Yong-Hang Zhang, Nothing uploaded yet

Investigation of digital alloyed AlInSb metamorphic buffers

Presentation: Vinita Dahiya, Julia I. Deitz, David A. Hollingshead, John A. Carlin, Tyler J. Grassman, and Sanjay Krishna, 7 slides

NAMBE 2017 Table of Contents

NAMBE 2017 Preface

NAMBE 2017 Title Page

NAMBE 2017 Committees