ALD-ALE 2018 Presentations
365 Presentations
0 Sections
Selective Area Deposition of BN using Electron Enhanced ALD
Reactive Monolayers for use in Area Selective Atomic Layer Deposition
Area-selective Atomic Layer Deposition using Si Precursor Inhibitors
In Situ and Ex Situ Monitoring and Metrology for the Development of a Selective Deposition Process
Area-Selective Atomic Layer Deposition of TiN, TiO2, and HfO2 on Si3N4 in Sub-50 Nanometer Si3/N4/Amorphous Carbon Structures
Toward Area Selective ALD on Metal/Dielectric Patterns: Comparison of Cu, Co, W and Ru
Advanced Cycles for Area-selective Atomic Layer Deposition
The Precise Tailoring of Catalyst Interface by Atomic Layer Deposition
Improving the Anti-sintering Ability of Au/TiO2 Catalysts by Constructing Semi-embedded Structure via Selective Atomic Layer Deposition
Tuning of Boron Nitride Nanotubes, Nanopores and Nanoporous Membranes by ALD
Integrated Isothermal Atomic Layer Deposition and Thermal Atomic Layer Etching: “Atomic-Level Processing” for Area-Selective Patterning of TiO2
Inherent Substrate Selectivity and Nucleation Enhancement during Ru ALD using the RuO4/-Precursor and H2-gas
Surface Preparation and High Nucleation for Selective Deposition using Anhydrous Hydrogen Peroxide
An Inherently Selective Atomic Layer Deposition of MoSix on Si (001) in Preference to Silicon Nitride and Silicon Oxide
Investigating the Difference in Nucleation during Si-based ALD on Different Surfaces (Si, SiC, SiO2 and SiNx) for Future Area-Selective Deposition (AS-ALD)
Strategies for Area Selective Atomic Layer Deposition and Applications in Catalysis
Amorphous In-Ga-Zn-O Thin-Film Transistor-Based Nonvolatile Memory Devices
Atomic Layer Deposition of Elemental Tellurium for Composition Tuning Of Ovonic Threshold Switching Materials
Plasma Enhanced Atomic Layer Deposition of Low Temperature Silicon Nitride for Encapsulation Layer using Novel Silicon Precursor
Atomic Layer Delta Doping and Deposition of Ultrathin Metallic TiN-based Channel for Room-temperature Field Effect Transistor
Influences of Annealing Conditions on Characteristics of Sn-doped Zinc Oxide Thin Film Transistors Fabricated by Atomic Layer Deposition
Atomic Layer Deposition of Yttrium Oxide from Bis(Methylcyclopentadienyl) (MethylPentyl Pyrazolato) Yttrium (III)
Low-temperature Thermal ALD of SiO2 Increasing the Possibilities
