Wettability of ALD Rare Earth Oxides for Superhydrophobic Coating Presentation: C.M. Yoon, 10 min 29 sec
Plasma Enhanced Atomic Layer Deposition of Ruthenium Below 100 °C Using RuO4 and H2-Plasma Presentation: M. Minjauw, 9 min 58 sec
Electronic State Configuration of Plasma-enhanced Atomic Layer Deposited SiO2 on GaN Presentation: B.S. Eller, 12 min 14 sec
High-reliability Passivation of Diamond Surface Conduction Layer Using High-temperature H2O-oxidant ALD Growth of Al2O3 Presentation: A. Hiraiwa, 13 min 46 sec
Low Temperature SiO2 Passivation by Plasma-Enhanced Atomic Layer Deposition and High-Density Plasma Chemical Vapor Deposition Presentation: T.S. English, 13 min 26 sec
Atomic Layer Deposition of ZnO Nanoparticles on Multi-Walled Carbon Nanotubes (MWCNTs) As a Functionalization Compound for Methane Sensing Application Presentation: Md. Humayun, 16 slides
Mechanistic Studies of Oxide and Nitride Deposition by in Situ Infrared Spectroscopy Presentation: Y. Chabal, 26 min 20 sec
Molecular Layer Deposition of "Titanicone," a Titanium-based Hybrid Material, As an Electrode for Lithium-ion Batteries Presentation: K. Van de Kerckhove, 13 min 33 sec
Atomic Layer Deposited TiAlC Film As Metal Gate for 22nm Node CMOS Technology and Beyond Presentation: J. Xiang, 12 min 24 sec
PEALD As the Method of Choice to Deposit TiO2-Barrier Layers on PET Substrates: A Comparison of New and Established Ti-Precursors Presentation: M. Gebhard, 10 min 43 sec
Plasma Effects on Conformality for Atomic Layer Deposition of Silicon Nitride Presentation: K. Kelchner, 12 min 55 sec
Capacitor Dielectric and Electrodes for DRAM with Sub-20 Nm Design Rule Presentation: C.S. Hwang, 30 min 30 sec
Study of Hydrogen Plasma Reduction of Nickel Substrate during PEALD Ta2O5 Deposition for Reram Application Presentation: R. Gassilloud, 12 min 41 sec
Atomic Layer Deposition of High Refractive Index Nb2O5 for Application as Optical Waveguide Material Presentation: P. Raisanen, 13 min 25 sec
Integration of Sub-10 Nm Functional Metal Oxide Films with Tailored Compositions for Application in Nonvolatile ReRAM Devices Presentation: S. Hoffmann-Eifert, 12 min 21 sec
Atomic Layer Deposition of Ge2Sb2Te5 Thin Films for Phase Change Memories Presentation: C.S. Hwang, 11 min 10 sec
HfO2 for Non-volatile Memories: from Resistors (RRAM) to Memory-impedance (MEM-Z) Devices Presentation: C. Vallee, 15 min 1 sec
Reducing Agents for the Atomic Layer Deposition of WS2 from the WF6 and H2S Precursors Presentation: A. Delabie, 12 min 18 sec
Study of the Surface Chemistry and Formation of Ternary Materials Deposited by ALD Presentation: A. Mackus, 13 min 42 sec