Skip to main content

AVS Technical Library

Events
Search
Cart 0
Sign In

Item Added to Cart

You just added

You have item(s) in your cart

  • Proceed to Checkout

WoDiM 2016 Conference Papers

21 Presentations 0 Sections

The 19th Workshop on Dielectrics in Microelectronics, was held from June 27-30, 2016, at the Hotel Baia Verde, in Aci Castello (Catania), Italy. This event was hosted by the Italian National Research Council (CNR) - Institute for Microelectronics and Microsystems (IMM), and celebrated the 10th anniversary of the last time the workshop was held in Italy.

The main objective of the workshop is to bring together specialists who work in the field of dielectrics and all aspects of their application in the field of micro and nanoelectronics. The forum is intended to provide an overview of the state of the art in this significant field, and to promote a relatively informal atmosphere for the discussion of the latest research results, where contributions from students are particularly encouraged. The workshop deals with a range of issues in the field of advanced and new dielectrics, such as: growth and deposition, modelling and simulation, physical and electrical properties, reliability and dielectric applications.

Presentation Icon

WoDiM 2016 Table of Contents

Presentation: 2 slides
Presentation Icon

WoDiM 2016 Title Page

Presentation: 1 slide
Presentation Icon

WoDiM 2016 Organizing Committee

Presentation: 1 slide
Presentation Icon

Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric

Presentation: Patrick Fiorenza, Giuseppe Greco, Filippo Giannazzo, Ferdinando Iucolano, and Fabrizio Roccaforte, 6 slides
Presentation Icon

High-k/GaN interface engineering toward AlGaN/GaN MIS-HEMT with improved Vth stability

Presentation: Nadine Szabo, Andre Wachowiak, Annett Winzer, Johannes Ocker, Jan Gartner, Rico Hentschel, Alexander Schmid, and Thomas Mikolajick, 5 slides
Presentation Icon

Impact of temperature on conduction mechanisms and switching parameters in HfO2-based 1T-1R resistive random access memories devices

Presentation: Eduardo Perez, Christian Wenger, Alessandro Grossi, Cristian Zambelli, Piero Olivo, and Robin Roelofs, 5 slides
Presentation Icon

Analysis and in situ observation of humidity dependent atomic layer deposited-Al2O3 degradation

Presentation: Andreas Ruckerl, Sophia Huppmann, Martin Mandl, Simeon Katz, and Roland Zeisel., 6 slides
Presentation Icon

Effects of the extension of conductive filaments, a simulation approach

Presentation: Marco A. Villena, Juan B. Roldan, Pedro Garcıa-Ferna´ndez, and Francisco Jimenez-Molinos, 5 slides
Presentation Icon

Effect of illumination and electric field intensity on the efficiency improvement of amorphous silicon tandem solar cells

Presentation: Andrea Scuto, Cosimo Gerardi, Anna Battaglia, and Salvatore Lombardo, 6 slides
Presentation Icon

Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density

Presentation: Milan Tapajna, Lukas Valik, Filip Gucmann, Dagmar Gregusova, Karol Frohlich, Stefan Hascık, Edmund Dobrocka, Lajos Toth, Bela Pecz, and Jan Kuzmık, 8 slides
Presentation Icon

Function-fit model for the rate of conducting filament generation in constant voltage-stressed multilayer oxide stacks

Presentation: A. Rodriguez-Fernandez, J. Sune, E. Miranda, M. B. Gonzalez, and F. Campabadal, 6 slides
Presentation Icon

Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices

Presentation: B. Kaczer, J. Franco, S. Tyaginov, M. Jech, G. Rzepa, T. Grasser, B. J. O’Sullivan, R. Ritzenhaler, T. Schram, A. Spessot, D. Linten, and N. Horiguchi, 6 slides
Presentation Icon

In-depth study of the physics behind resistive switching in TiN/Ti/HfO2/W structures

Presentation: Gerardo Gonzalez-Cordero, Francisco Jimenez-Molinos, Juan Bautista Roldan, Mireia Bargallo Gonzalez, and Francesca Campabadal, 5 slides
Presentation Icon

Reliability improvements of TiN/Al2O3/TiN for linear high voltage metal–insulator–metal capacitors using an optimized thermal treatment

Presentation: Aude Lefevre, Delphine Ferreira, Marc Veillerot, Jean-Paul Barnes, Guy Parat, Malte Czernohorsky, and Florent Lallemand, 8 slides
Presentation Icon

Applications of clustering model to bimodal distributions for dielectric breakdown

Presentation: Ernest Y. Wu, Ronald Bolam, Ronald Filippi, James H. Stathis, Baozhen Li, and Andrew Kim, 8 slides
Presentation Icon

Transmission microwave spectroscopy for local characterization of dielectric materials

Presentation: Andrea Lucibello, Christopher Hardly Joseph, Emanuela Proietti, Giovanni Maria Sardi, Giovanni Capoccia, and Romolo Marcelli, 8 slides
Presentation Icon

Impact of low thermal processes on reliability of high-k/metal gate stacks

Presentation: Artemisia Tsiara, Xavier Garros, Cao-Minh Vincent Lu, Claire Fenouillet-Beranger, and Gerard Ghibaudo, 4 slides
Presentation Icon

Effect of oxide traps on channel transport characteristics in graphene field effect transistors

Presentation: Marlene Bonmann, Andrei Vorobiev, Jan Stake, and Olof Engstrom, 8 slides
Presentation Icon

Optimization of UV-assisted wet oxidation of GaAs

Presentation: Filip Gucmann, Robert Kudela, Alica Rosova, Edmund Dobrocka, Matej Micusık, and Dagmar Gregusova, 5 slides
Presentation Icon

Barrier tuning of atomic layer deposited Ta2O5 and Al2O3 in double dielectric diodes

Presentation: Ibrahim Nemr Noureddine, Naser Sedghi, Ivona Z. Mitrovic, and Steve Hall, 5 slides
Presentation Icon

Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric

Presentation: Peng Zhao, Angelica Azcatl, Pavel Bolshakov, Jiyoung Moon, Christopher L. Hinkle, Paul K. Hurley, Robert M. Wallace, and Chadwin D. Young, 5 slides
  • Events
  • Search
  • Support
  • Sign In
  • Privacy Policy | Cookies Policy