NAMBE 2016 Conference Papers

21 Presentations 0 Sections

The 32nd North American Conference on Molecular Beam Epitaxy (NAMBE 2016) is a prominent international forum for reporting scientific and technological developments in Molecular Beam Epitaxy research.

The conference showcases important results from fundamental materials and device research, through technological applications, and into high-volume and low-cost production. NAMBE features the presentations of the MBE Innovator Award, the NAMBE Young Investigator Award, and the Best Student Paper awards.

In addition to a diverse technical program, vendors will exhibit the latest equipment available for material growth and characterization. The exhibit will surround the coffee breaks and poster presentations, providing many opportunities for discussions between attendees and vendors.

Growth of InGaAsP solar cells and their application to triple-junction top cells used in smart stack multijunction solar cells

Presentation: Takeyoshi Sugaya, Yuki Nagato, Yoshinobu Okano, Ryuji Oshima, Takeshi Tayagaki, Kikuo Makita, and Koji Matsubara, 5 slides

Control of unintentional oxygen incorporation in GaN

Presentation: Stefan Schmult, Felix Schubert, Steffen Wirth, Andreas Großer, Terence Mittmann, and Thomas Mikolajick, 5 slides

III-V semiconductor extended short-wave infrared detectors

Presentation: Gregory R. Savich, Daniel E. Sidor, Xiaoyu Du, Gary W. Wicks, Mukul C. Debnath, Tetsuya D. Mishima, Michael B. Santos, Terry D. Golding, Manish Jain, Adam P. Craig, and Andrew R. J. Marshall, 5 slides

Transport properties of Bi2(Se12xTex)3 thin films grown by molecular beam epitaxy

Presentation: Yong Wang, Theresa P. Ginley, Chiyu Zhang, and Stephanie Law, 5 slides

On the study of antimony incorporation in InAs/InAsSb superlattices for infrared sensing

Presentation: Heather J. Haugan, Gail J. Brown, and Joseph A. Peoples, 4 slides

Controlling color emission of InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy

Presentation: Moab R. Philip, Dipayan D. Choudhary, Mehrdad Djavid, Md Nasiruddin Bhuyian, James Piao, Thi T. Pham, Durgamadhab Misra, and Hieu P. T. Nguyen, 5 slides

Surface preparation of freestanding GaN substrates for homoepitaxial GaN growth by rf-plasma MBE

Presentation: David F. Storm, Thomas O. McConkie, Matthew T. Hardy, D. Scott Katzer, Neeraj Nepal, David J. Meyer, and David J. Smith, 6 slides

AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

Presentation: David F. Storm, Tyler A. Growden, Weidong Zhang, Elliott R. Brown, Neeraj Nepal, D. Scott Katzer, Matthew T. Hardy, Paul R. Berger, and David J. Meyer, 4 slides

Mid-IR resonant cavity detectors

Presentation: Trevor A. O’Loughlin, Gregory R. Savich, Daniel E. Sidor, Brendan T. Marozas, Terry D. Golding, Keith D. Jamison, Leif Fredin, Burt Fowler, Weerasinghe Priyantha, and Gary W. Wicks, 4 slides

Threading dislocations in MBE grown AlInSb metamorphic buffers: Revealed and counted

Presentation: Yinqiu Shi, Denise Gosselink, Vladimir Y. Umansky, Jan L. Weyher, and Zbig R. Wasilewski, 6 slides

High-resolution x-ray reflection Fourier analysis of metamorphic Si/SiGe quantum wells

Presentation: Christopher J. K. Richardson, Clayton A. Jackson, Lisa F. Edge, and Peter W. Deelman, 5 slides

In situ flashes of gallium technique for oxide-free epiready GaSb (100) surface

Presentation: Sen Mathews, Theodore Schuler-Sandy, Jong Su Kim, Clark Kadlec, Alireza Kazemi, Vinita Dahiya, David A. Ramirez, Stephen A. Myers, Yuliya V. Kuznetsova, and Sanjay Krishna, 4 slides

MBE growth and digital etch of GaSb/InAs nanowires on Si for logic applications

Presentation: Katherine Dropiewski, Vadim Tokranov, Michael Yakimov, Serge Oktyabrsky, Steven Bentley, and Rohit Galatage, 6 slides

Growth of ordered and disordered ZnSnN2

Presentation: Robert Allen Makin, Nancy Senabulya, James Mathis, N. Feldberg, P. Miska, Roy Clarke, and Steven M. Durbin, 6 slides

MBE growth techniques for InAs-based nBn IR detectors

Presentation: Daniel E. Sidor, Gregory R. Savich, Brendan T. Marozas, Xiaoyu Du, Trevor A. O’Loughlin, Geoffrey D. Jenkins, William D. Hughes, Christian P. Morath, Vincent M. Cowan, and Gary W. Wicks, 7 slides

NAMBE 2016 Preface

NAMBE 2016 Table of Contents

NAMBE 2016 Title Page

NAMBE 2016 Organizing Committee

Engineering carrier lifetimes in type-II In(Ga)Sb/InAs mid-IR emitters

Temperature monitoring of narrow bandgap semiconductors