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ALD 2012 Presentations

103 Presentations 0 Sections

The AVS Topical Conference on Atomic Layer Deposition (ALD 2012) will be a three-day meeting (preceded by one day of tutorials), dedicated to the science and technology of atomic layer controlled deposition of thin films. Atomic layer deposition (ALD) is used to fabricate ultrathin and conformal thin film structures for many semiconductor and thin film device applicati ons. A unique attribute of ALD is that it uses sequential self-limiting surface reactions to achieve control of film growth in the monolayer or sub-monolayer thickness regime. ALD is receiving attention for its potential applications from advanced electronics, microsystems, and displays to energy capture and storage, solid state lighting, biotechnology, security, and consumer products - particularly for any advanced technologies that require control of film structure in the nanometer or sub-nanometer scale.

Audio recordings (with the synchronized PowerPoint presentation) are available in this portal.

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Welcome to the 12th annual conference on atomic layer deposition in Dresden, which was held as joint meeting with the Baltic ALD 2012. During the past years, the ALD technique as well as the community has seen a continuing increase in attraction, showing that ALD moved from a niche application to a mature and well accepted technology. This increase was remarkable, particularly in the past few years. It became necessary to introduce parallel sessions and the chairs often suffered from lack of space in the conference rooms, making in necessary to improvise. It almost became habit that the number of submitted contributions and participants are topping the numbers of previous years.

Despite some further conferences taking place in parallel, this year's submission count and the number of registered participants again resulted in unexpectedly high numbers. With more than 320 submitted abstracts from all around the world, ALD has obviously moved from a barely known technology to an essential tool of many laboratories worldwide.

An important point which many colleagues enjoy while talking about ALD conferences is multidisciplinarity. The past conferences have shown many shifts in the main focus, but one fact is common with all of them: Once in a year, ALD brings together scientists and engineers through the whole spectrum from fundamental research to applied research, and further to industrial development. Unlike other meetings with similar mixture of interests, the ALD conferences have maintained a common language and a very hearty atmosphere. With this in mind, we kept as good as possible the widespread coverage of topical interests and hope that it will be to your satisfaction.

The future of the ALD community relies on young researchers and students. For this reason, also this year awards will be issued. One award will be issued for the best poster presentation, sponsored by Oxford instruments, and another award for the best student paper, sponsored by Novellus Systems Inc. Besides, a senior scientist will be awarded by the AVS for his/her significant research on/with ALD. In this way, the ALD community aims to say “thank you” to the awardees and encourage their further effort.

The conference is for the first time held in Germany and the beautiful city of Dresden was considered as the best possible place. Besides being the focal point of German ALD research activities, Dresden offers much more: Being a city of great historical importance in this part of Europe, it offers a great number of attractions, partly original, and partly restored after severe destruction, but with great fidelity.

Uwe Schröder & Mato Knez, Conference Chairs, ALD & Baltic ALD 2012

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Atomic-scale simulation of the transmetallation mechanism for copper ALD

Presentation: T. S. D. Elliott, G. Dey, Y. Maimaiti, 19 min 44 sec
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In-situ FTIR characterization of growth inhibition in Atomic Layer Deposition using reversible surface functionalization

Presentation: A.Yanguas-Gil, J. A. Liberia, G. N. Parsons, 22 min 32 sec
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Oxidative Molecular Layer Deposition of PEDOT a Conductive Polymer

Presentation: S.Atanasov, B. Gong, G. N. Parsons, 19 min 34 sec
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TiO2-on-insulating-layer and insulating-layer-on-TiO2 photo anodes for next- generation dye-sensitized solar cells

Presentation: A. K. Chandiran, Md. K. Nazeeruddin, 21 min 10 sec
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Ferroelectric Phase Transitions in Poly-Crystalline Al:HfO2-Thin Films

Presentation: S. Mueller, A.Singh, T. Mikolajick, J. Müller, S Riedel, J. Sundqvist, 15 min 21 sec
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Low Temperature Growth of High Purity, Low Resistivity Copper Films by Atomic Layer Deposition

Presentation: T. Knisley, T. C. Ariyasena, C. H. Winter, T. Sajavaara, M. J. Saly, 14 min 47 sec
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Investigating the interface between high mobility III-V semiconductors and ALD oxides for future transistor applications

Presentation: P. Hurley, V Djara, É. O’Connor, J. Lin, S. Monaghan, I. Povey, M. Pemble, M. A. Negara, D. O’Connell, K. Cherkaoui, 25 min 31 sec
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Surface chemistry during incubation period of ALD of aluminium and hafnium oxides on oxidised III-V substrate from simulation

Presentation: S. Klejna, S. D. Elliott, 11 min 44 sec
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Effect of H2 plasma pre-treatment on the reduction of native oxides at the PEALD Al2O3/GaSb interface

Presentation: E. Cleveland, L. B. Ruppalt, J. B. Boos, B. R. Bennett, S.M. Prokes, 11 min 52 sec
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TMA-based atomic layer deposition of high-permittivity Al:HfO2 and Al:ZrO2 on In0.53 Ga0.47 As substrates

Presentation: E.Cianci, A. Molle, S. Baldovino, A. Lamperti, C. Wiemer, S. Spiga, M. Fanciulli, C. Merckling, G. Brammertz, M. Caymax, 14 min 9 sec
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Interface Electronic State Characterization of Remote PEALD High-k Dielectrics on GaN

Presentation: B. S. Eller, R. J. Nemanich, 10 min 56 sec
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Scanning Probe Microscopy of Single Molecules on Ultrathin Insulation Films

Presentation: Jascha Repp, 27 min 18 sec
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Measuring Adhesion of ALD Aluminum Oxide Thin Films on Silicon Substrate by using Embedded Nanospheres

Presentation: Jussi Lyytinen, Maria Berdova, Xuwen W. Liu, Juha Larismaa, Jari Koskinen, Sami Franssila, 13 min 44 sec
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Surface Characterization and Process Control for ALD using Inline XPS Technique

Presentation: Min Dai, Srinivasan Rangarajan, Joseph F Shepard, Rishikesh Krishnan, Bing Sun, Arun Srivatsa, Michael P Chudzik , Mark Klare, Michael Kwan, Tom Larson, 10 min 45 sec
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Probing ultrathin film continuity and interface abruptness with x-ray photoelectron spectroscopy and low-energy ion scattering

Presentation: Wenyu Zhang, Rambert K. Nahm, James R. Engstrom, Paul F. Ma, 12 min 56 sec
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Densification of Low-Temperature ALD Aluminum Oxide Thin Films by in-situ Flash Annealing

Presentation: T. Henke, C. Hossbach, M. Knaut, M. Geidel, M. Albert, J. W. Bartha, A. Singh, 14 min 45 sec
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Atomic layer deposition of ruthenium (Ru) thin films using ethylbenzene-cyclohexadienyl Ru(0) as a seed layer for copper metallizations

Presentation: Seungmin Yeo, Sang-Hyeok Choi, Soo-Hyun Kim, Taehoon Cheon, Byoung-Yong Lim, Sunjung Kim, Tae-Eun Hong, 12 min 11 sec
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Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and H2 plasma and applications to a diffusion barrier and contact material

Presentation: Sang-Kyung Choi, Soo-Hyun Kim, Taehoon Cheon, 13 min 26 sec
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Development of a TaCN Batch Furnace ALD Process

Presentation: M. Drescher, J. Sundqvist, A. Naumann, P. Polakowski, J. Calvo, M. Czernohorsky, E. Erben, K. Hempel, J. Metzger, B. Jongbloed, H. Sprey, G. Probst, S. Beulens, S. Haukka, 15 min 30 sec
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Low temperature PEALD SiN for gate first HKMG sidewall protection layer

Presentation: D.H. Triyoso, V. Jaschke, J. Shu, S. Mutas, K. Hempel, J. Schaeffer, S. Ohsiek, M. Lenski, 13 min 19 sec
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Elaboration of functional carbon based heterostructures by controlled surface functionalization and metal oxide ALD

Presentation: C. Marichy, N. Pinna, K.H. Lee, M.G. Willinger, J.-P. Tessonnier, S. Cavaliere, G. Neri, 12 min 14 sec
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Patterning of ALD Coatings on Textiles

Presentation: William J. Sweet III, Christina K. Devine, Christopher J. Oldham, Gregory N. Parsons, Jesse S. Jur, 16 min 11 sec
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Synthesis of noble metal core/shell nanoparticles by ALD

Presentation: M.J. Weber, A.J.M. Mackus, W.M.M. Kessels, M.A. Verheijen, C. van der Marel, 12 min 57 sec
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Atomic layer deposition of W:Al2O3 nanocomposites with tunable resistivity

Presentation: Anil U. Mane, Jeffrey W. Elam, 16 min 9 sec
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Nanoscale Architectures Fabricated by Atomic Layer Deposition and Conformal Coating of Nanotemplates for Solar Energy Conversion

Presentation: Hyunjung Shin, 25 min 46 sec
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