A Remote Plasma Spectroscopy Based Method for Monitoring of Atomic Layer Deposition Processes Presentation: Joseph Brindley, Gencoa Ltd, UK, 20 min 22 sec
Selective Area Deposition of BN using Electron Enhanced ALD Presentation: Jaclyn Sprenger, University of Colorado - Boulder, 16 min 13 sec
Reactive Monolayers for use in Area Selective Atomic Layer Deposition Presentation: Rudy Wojtecki, IBM Research - Almaden, 14 min 8 sec
Area-selective Atomic Layer Deposition using Si Precursor Inhibitors Presentation: Mohammad Rizwan Khan, Incheon National University, Korea, 15 min 54 sec
In Situ and Ex Situ Monitoring and Metrology for the Development of a Selective Deposition Process Presentation: Christophe Vallee, LTM-UGA, France, 12 min 42 sec
Area-Selective Atomic Layer Deposition of TiN, TiO2, and HfO2 on Si3N4 in Sub-50 Nanometer Si3/N4/Amorphous Carbon Structures Presentation: Eric Stevens, IMEC, 17 min 43 sec
Toward Area Selective ALD on Metal/Dielectric Patterns: Comparison of Cu, Co, W and Ru Presentation: Dara Bobb-Semple, Stanford University, 16 min 0 sec
The Precise Tailoring of Catalyst Interface by Atomic Layer Deposition Presentation: Yong Qin, Institute of Coal Chemistry, Chinese Academy of Sciences, China, 36 min 9 sec
Improving the Anti-sintering Ability of Au/TiO2 Catalysts by Constructing Semi-embedded Structure via Selective Atomic Layer Deposition Presentation: Yuanting Tang, Huazhong University of Science and Technology, China, 16 min 56 sec
Tuning of Boron Nitride Nanotubes, Nanopores and Nanoporous Membranes by ALD Presentation: Matthieu Weber, Institut Européen des Membranes, France, 13 min 9 sec
Integrated Isothermal Atomic Layer Deposition and Thermal Atomic Layer Etching: “Atomic-Level Processing” for Area-Selective Patterning of TiO2 Presentation: Seung Keun Song, North Carolina State University, 15 min 21 sec
Inherent Substrate Selectivity and Nucleation Enhancement during Ru ALD using the RuO4/-Precursor and H2-gas Presentation: Matthias Minjauw, Ghent University, Belgium, 16 min 2 sec
Surface Preparation and High Nucleation for Selective Deposition using Anhydrous Hydrogen Peroxide Presentation: Dan Alvarez, Jr. PHD, 14 min 31 sec
An Inherently Selective Atomic Layer Deposition of MoSix on Si (001) in Preference to Silicon Nitride and Silicon Oxide Presentation: Jong Youn Choi, University of California San Diego, 12 min 42 sec
Investigating the Difference in Nucleation during Si-based ALD on Different Surfaces (Si, SiC, SiO2 and SiNx) for Future Area-Selective Deposition (AS-ALD) Presentation: Ekaterina A. Filatova, Tyndall National Institute, University College Cork, Ireland, 16 min 5 sec
Strategies for Area Selective Atomic Layer Deposition and Applications in Catalysis Presentation: Rong Chen, Huazhong University of Science and Technology, China, 35 min 35 sec
Amorphous In-Ga-Zn-O Thin-Film Transistor-Based Nonvolatile Memory Devices Presentation: Shi-Jin Ding, Fudan University, China, 32 min 7 sec
Atomic Layer Deposition of Elemental Tellurium for Composition Tuning Of Ovonic Threshold Switching Materials Presentation: Stephen Weeks, Intermolecular, Inc., 19 min 24 sec
Plasma Enhanced Atomic Layer Deposition of Low Temperature Silicon Nitride for Encapsulation Layer using Novel Silicon Precursor Presentation: SungGi Kim, DNF Co. Ltd, 15 min 38 sec
Atomic Layer Delta Doping and Deposition of Ultrathin Metallic TiN-based Channel for Room-temperature Field Effect Transistor Presentation: Yu-Tung Yin, National Taiwan University, Republic of China, 12 min 36 sec
Influences of Annealing Conditions on Characteristics of Sn-doped Zinc Oxide Thin Film Transistors Fabricated by Atomic Layer Deposition Presentation: Tao Wang, Fudan University, China, 11 min 52 sec
Atomic Layer Deposition of Yttrium Oxide from Bis(Methylcyclopentadienyl) (MethylPentyl Pyrazolato) Yttrium (III) Presentation: Jun Feng, EMD Performance Materials, 14 min 25 sec
Low-temperature Thermal ALD of SiO2 Increasing the Possibilities Presentation: Juhana Kostamo, Picosun Oy, Finland, 13 min 38 sec
Non-pyrophoric Aluminum Precursor for Thermal Atomic Layer Deposition of Al2O3 Thin Films Presentation: Jungwun Hwang, Hansol Chemical, Republic of Korea, 15 min 29 sec