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ALD 2011 Presentations

111 Presentations 0 Sections

The AVS Topical Conference on Atomic Layer Deposition (ALD 2011) will be a three-day meeting (preceded by one day of tutorials), dedicated to the science and technology of atomic layer controlled deposition of thin films. Atomic layer deposition (ALD) is used to fabricate ultrathin and conformal thin film structures for many semiconductor and thin film device applications. A unique attribute of ALD is that it uses sequential self-limiting surface reactions to achieve control of film growth in the monolayer or sub-monolayer thickness regime. ALD is receiving attention for its potential applications from advanced electronics, microsystems, and displays to energy capture and storage, solid state lighting, biotechnology, security, and consumer products - particularly for any advanced technologies that require control of film structure in the nanometer or sub-nanometer scale.

Audio recordings (with the synchronized PowerPoint presentation) are available in this portal.
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Welcome to the 11th annual Atomic Layer Deposition (ALD 2011) conference. We are pleased to host this year’s conference in Cambridge, Massachusetts (USA). Well known for its Ivy League universities and global businesses, Cambridge is recognized around the world as a hub for innovative research, development, and technological advancement.

We have incorporated several new and exciting elements into this year’s conference. First, we are honored to have Dr. Robert Langer, the David H. Koch Institute Professor from the Massachusetts Institute of Technology, as our keynote speaker. Dr. Langer is the most cited chemical engineer in history and was named one of the 25 most important people in the biotechnology industry by both Forbes and BioWorld magazines. His expertise is particularly fitting, as this is the first year we’ve added Biotechnology as an abstract category.

This event going into its 11th year underlines the fact that ALD has become a mainstream technology that is being utilized to enhance more products and processes across various industries marketed worldwide. The potential of ALD technology is infinite. To expand upon this, a special session on the Industrialization of ALD will be included in this year’s conference. We are excited to have scientists, engineers, and technologists from all over the world under one roof exchanging ideas and sharing their expertise in this forum. In addition to Dr. Langer, over 20 speakers have been invited to give oral presentations that will cover a wide array of research topics.

In the spirit of industrialization, two awards will be presented for the first time at ALD 2011. First will be the ALD Innovation Award. This award recognizes an individual whose contributions have revolutionized ALD technology. The second is the Student Award. We felt it was important to highlight and celebrate outstanding research performed by a graduate student in areas of interest to Atomic Layer Deposition. The finalists will be selected on the basis of abstract submission. Each will receive a $500 award upon attending the ALD International Symposium and presenting their paper in an oral session. The Best Student Paper Award winner will be selected from three finalists on the basis of their oral presentation, quality of research, and clarity of presentation. The award consists of a $500 cash prize and certificate. Lastly, new abstract categories were added this year to focus on ALD research areas that are unique and promising. We received an unprecedented number of abstract submissions—over 240—the most in the history of this conference! Due to the abundance of submissions, we have instituted parallel sessions throughout most of the conference.


This conference would not be possible if it were not for the tireless efforts and continued support of Della Miller and her team at AVS. We want to thank them for all of the hard work they have undertaken to make ALD 2011 a success. We would also like to express gratitude to all of our committee members, sponsors, exhibitors, attendees, and talent that have contributed to make this year’s ALD conference a success.

Jill S. Becker and Gary Rubloff, Conference Chairs, ALD 2011

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The Nature of the III-V/Oxide Interface and its Impact on the ALD Growth of High-k Dielectrics for Advanced CMOS

Presentation: M. Pemble, E. O'Connor, A. O'Mahony, B. Brennan, V Djara, C. Azzolini, K. Cherkaoui, S. Monaghan, R. Nagle, I.M. Povey, A. Blake, R. Contreras, M. Milojevic, G. Hughes, R.M. Wallace, P.K. Hurley, 30 min 45 sec
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Semiconductor-Metal Transition in Thin VO2 Films Grown by Ozone Based Atomic Layer Deposition

Presentation: G. Rampelberg, M. Schaekers, K. Martens, Q. Xie, D. Deduytsche, B. De Schutter, N. Blasco, J. Kittl, C. Detavernier, 16 min 43 sec
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Atomic Layer Epitaxy of Rare Earth Oxide Films on GaAs(111)A and Their Device Properties

Presentation: Y. Liu, M. Xu, J. Heo, P.D. Ye, R.G. Gordon , 19 min 28 sec
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Y2O3 Films Grown by a Novel ALD Process from Y(EtCp)3 and Water Enabling Y-Based Silicates in Direct Contact with Si with Sub-nm EOTs

Presentation: C. Dubourdieu, M. Copel, E. Cartier, J. Bruley, M. Hopstaken, S.M. Rossnagel, A. Kellock, M. M. Frank, 15 min 24 sec
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Atomic Layer Deposition of Ultrathin High-ê Dielectrics on Epitaxial Graphene via Fluorine Functionalization

Presentation: V. Wheeler, N.Y. Garces, L.O. Nyakiti, R.L. Myers-Ward, G.G. Jernigan, C.R. Eddy Jr, D.K. Gaskill, 20 min 47 sec
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ALD Beryllium Oxide as a High-k Gate Dielectric for III-V MOS Devices

Presentation: J. Yum, T. Akyol, M. Lei, D.A. Ferrer, T.W. Hudnall, M. Downer, C.W. Bielawski, G. Bersuker, J.C. Lee, S.K. Banerjee, 13 min 29 sec
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Novel Semi-batch ALD Technology for ULSI Device Fabrication

Presentation: K.H. Lee, D. H. You, H.C. Ha, K.H. Ahn, 29 min 37 sec
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Atomic Layer Deposition of MgO for High-k Capping Layers

Presentation: F. Tang, E. Tois, S-H. Jung, P. Räisänen, M. Givens, J.W. Maes, D. Pierreux, V. Machkaoutsan, M. Tuominen, S. Haukka, 15 min 4 sec
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HfAlO3 Gate Stack on III-V p-channel Material GaSb: ALD Hf-first Versus Al-first

Presentation: C. Wang, M. Xu, J. Zhang, P.D. Ye, 16 min 15 sec
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In-situ Electrical Studies of Ozone Based Atomic Layer Deposition on Graphene

Presentation: S. Jandhyala, B. Lee, G. Mordi, J. Kim, 16 min 42 sec
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Evaluation of Novel Precursors for Atomic Layer Deposition of Nb2O5 Thin Films

Presentation: T. Blanquart , J. Niinistö, M. Heikkilä, C. Xu, W. Hunks, M. Ritala, 13 min 10 sec
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Copper Films Grown via Copper Oxide ALD Integrated with Different Liner Materials for Interconnect Applications

Presentation: T. Waechtler , S. Mueller, L. Hofmann, R. Mothes, S.-F. Ding, S. E. Schulz, H. Lang, X-P. Qu, T. Gessner, 11 min 50 sec
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Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD) of Copper-Based Metallization for Microelectronic Fabrication

Presentation: Y. Au, Y. Lin, H. Kim, Z. Li, R. Gordon, 16 min 52 sec
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ZnO-Based Light-Emitting Diodes Grown by Atomic Layer Deposition

Presentation: M. Chen, J-J. Huang, J-R. Yang, M. Shiojiri, 33 min 8 sec
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Enabling High Performance Ultraviolet Instruments for Astronomy and Space Exploration with ALD

Presentation: F. Greer, M.E. Hoenk, T.J. Jones, B.C. Jacquot, S. Monacos, S. Nikzad, E. Hamden, D. Schiminovich, 18 min 27 sec
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Mechanism of Noble Metal ALD

Presentation: S. Elliott, 30 min 18 sec
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Fluid Flow Effects in ALD for Semiconductor Manufacturing

Presentation: J.P. Trelles, S.S. Liao, 14 min 32 sec
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In Situ Gas Phase Measurements and Equipment-Scale Simulations of Metal Alkylamide ALD Processes

Presentation: J.E. Maslar , D.R. Burgess, Jr., E.F. Moore, W.A. Kimes, B.A. Sperling, 15 min 16 sec
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Reaction Modeling During TiN Growth Using TiCl4 and MMH

Presentation: K. Narushima, S.Y. Kang, Y. Kato, Y. Otsuka, T. Hotta, A. Kakimoto, M. Tachibana, Y. Hanada, 14 min 26 sec
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Coupling Ballistic Transport and Surface Reaction Models for Direct Simulation of Conformal ALD

Presentation: R. Adomaitis, 19 min 56 sec
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New Volatile Precursors for Group 2 Metals

Presentation: J. Norman, M. Perez, M.S. Kim, X. Lei, S. Ivanov, A. Derecskei, L. Matz, I. Buchanan, 16 min 24 sec
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High Rate Growth of SiO2 by Thermal ALD Using Tris(dimethylamino)silane and Ozone

Presentation: G. Liu, R. Bhatia, E.W. Deguns, M.J. Dalberth, M.J. Sowa, A. Bertuch , L. Lecordier, G. Sundaram, 20 min 40 sec
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Plasma-Enhanced ALD of TiO2 Using Cp-Based Precursors and Various Plasma Compositions: Experiments and DFT Calculations

Presentation: S.E. Potts, N. Leick, A. Zydor, S. D. Elliott, W.M.M. Kessels, 12 min 38 sec
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Nitrogen-Mediated ALD of Platinum: Precursor Synthesis, Film Deposition and Mechanistic Insights

Presentation: S.B. Clendenning, P.E. Romero, H.S. Simka, A.B. Mukhopadhyay, S. Shankar, 15 min 41 sec
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p-Type Phosphorus-doped Zinc Oxide Films Deposited by Atomic Layer Deposition: Microstructural Effects

Presentation: W.L. Gladfelter, H. Yuan, B. Luo, S.A. Campbell, 18 min 33 sec
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