Investigation of Atomic Layer Etching Process and UV Damage for AlGaN/GaN HEMT Presentation: Hiroyuki Fukumizu, Toshiba Memory Corporation, Japan, 27 min 13 sec
Plasma-assisted Atomic Layer Etching of Si-based Dielectric Films Studied using in situ Surface Diagnostics Presentation: Sumit Agarwal, Colorado School of Mines, 33 min 16 sec
Silicon Atomic Layer Etching by Two-step Plasma-enhanced Atomic Layer Deposition Consisting of Oxidation and (NH4)2SiF6 Formation Presentation: Ji-Hye Kim, ISAC Research Inc., Republic of Korea, 11 min 55 sec
Molecular Dynamics Simulation of SiO2 Atomic-layer Etching (ALE) by Fluorocarbon and Argon Plasmas Presentation: Satoshi Hamaguchi, Osaka University, Japan, 17 min 58 sec
Bias System for Controlling Ion Energy Distributions Presentation: Dan Carter, Advanced Energy Industries, Inc., 18 min 46 sec
Reactions of Hexafluoroacetylacetone ( hfac) and Metal Surfaces under Low-energy Ion Irradiation Presentation: Tomoko Ito, Osaka University, Japan, 14 min 25 sec
Application of ALE Technology to <10nm Generation Logic Device Fabrication Presentation: Jongchul Park, Samsung, 32 min 31 sec
Isotropic Atomic Layer Etching of ZnO on 3D Nanostructures, using Acetylacetone and O2 Plasma Presentation: Alfredo Mameli, Eindhoven University of Technology, Netherlands, 13 min 58 sec
Etching Reactions of Halogenated Layers Induced by Irradiation of Low-energy Ions and Gas-clusters Presentation: Kazuhiro Karahashi, Osaka University, Japan, 16 min 1 sec
Optimization of Atomic Layer Etch Process for Fabrication of Dual Barrier GaN-based Power Device using in-situ Auger Spectrometric Surface Analysis Presentation: Xu Li, University of Glasgow, UK, 14 min 25 sec
Forcing Timescale: Can Monolayer Stability Be Built Into a Precursor? Presentation: Sean Barry, Carleton University, Canada, 29 min 46 sec
Comparative Study on New Heteroleptic Zirconium ALD Precursors Presentation: Sanni Seppälä, University of Helsinki, Finland, 13 min 46 sec
A New Class of ALD Precursors for Aluminum Oxide – Potential Alternative to TMA! Presentation: Lukas Mai, Ruhr-University Bochum, Germany, 16 min 12 sec
Atomic Layer Deposition of Aluminum Metal Using a Thermally Stable Aluminum Hydride Reducing Agent Presentation: Kyle Blakeney, Wayne State University, 16 min 3 sec
Low Temperature PE-ALD of Copper Films using Copper Aminoalkoxides Precursors with Hydrogen Presentation: Akihiro Nishida, ADEKA Corporation, Japan, 15 min 9 sec
Atomic Layer Deposition of Rhenium Selenide Thin Films Presentation: Mikko Ritala, University of Helsinki, Finland, 13 min 45 sec
Plasma Enhanced Atomic Layer Deposition of Silicon Nitride Films with Inorganic Disilane Precursors Presentation: Xiaobing Zhou, Dow Chemicals, 18 min 46 sec
Different Growth Mechanism of SiO2 Layer on Various High-k films by PE-ALD using Tris(dimethylamino)silane and Oxygen Plasma Presentation: Toshihide Nabatame, National Institute for Materials Science, Japan, 14 min 39 sec
In-situ Surface Science Studies of Atomic Layer Processes of GaN Surfaces in Preparation for Atomic Layer Epitaxial Growth Presentation: Samantha Rosenberg, U.S. Naval Research Laboratory, 16 min 3 sec
Surface Chemistry during Atomic Layer Deposition of Zn(O,S) Presentation: Bonggeun Shong, Hongik University, Republic of Korea, 16 min 26 sec
Surface Reaction Mechanism of Atomic Layer Deposited Metal on Organic Textiles Presentation: Jong Seo Park, Yonsei University, Republic of Korea, 14 min 43 sec